PDC3810H Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Q1 Q2 PPAK3x3 Asymmetric Dual Pin Configuration G2S2 S2S2 G1D1D1D1 S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 G1 D1 G2 S1 BVDSS 30V 30V RDSON 10.5m 10.5m ID 19.5A 19.5A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed D2 - Halogen free Applications - MB / VGA / Vcore - POL Buck Applications - SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS PD TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current -...